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MJD340 (NPN) MJD350 (PNP) High Voltage Power Transistors
DPAK For Surface Mount Applications
Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications.
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* Lead Formed for Surface Mount Applications in Plastic Sleeves * * * * * *
(No Suffix) Electrically Similar to Popular MJE340 and MJE350 300 V (Min) - VCEO(sus) 0.5 A Rated Collector Current Epoxy Meets UL 94 V-0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V Pb-Free Packages are Available
SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS, 15 WATTS
4 12
3
DPAK CASE 369C STYLE 1 Unit Vdc Vdc Vdc Adc W W/C W W/C C Y = Year WW = Work Week J3x0 = Device Code x= 4 or 5 G = Pb-Free Package
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous - Peak Symbol VCEO VCB VEB IC PD PD Max 300 300 3 0.5 0.75 15 0.12 1.56 0.012 -65 to +150
MARKING DIAGRAM
YWW J3x0G
Total Power Dissipation @ TC = 25C Derate above 25C Total Power Dissipation (Note 1) @ TA = 25C Derate above 25C Operating and Storage Junction Temperature Range
TJ, Tstg
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet.
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (Note 1) Leading Temperature for Soldering Purpose Symbol RqJC RqJA TL Max 8.33 80 260 Unit C/W C/W C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
(c) Semiconductor Components Industries, LLC, 2010
October, 2010 - Rev. 7
1
Publication Order Number: MJD340/D
hFE , DC CURRENT GAIN
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. ON CHARACTERISTICS (Note 2) OFF CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
DYNAMIC CHARACTERISTICS
Current Gain -- Bandwidth Product (IC = 50 mA, VCE = 10 V, f = 10 MHz)
Base-Emitter On Voltage (IC = 1 A, VCE = 10 V)
Collector-Emitter Saturation Voltage (IC = 100 mA, IB = 10 mA)
Emitter Cutoff Current (VBE = 3 V, IC = 0)
Collector Cutoff Current (VCB = 300 V, IE = 0)
Collector-Emitter Sustaining Voltage (Note 2) (IC = 1 mA, IB = 0)
DC Current Gain (IC = 50 mA, VCE = 10 V)
200
100
300
20
30
70
10
50
1
+100C
+ 25C
- 55C
2
TJ = 150C
3
Characteristic
5
MJD340 (NPN) MJD350 (PNP)
7
TYPICAL CHARACTERISTICS
10
Figure 1. DC Current Gain
20 30 50 IC, COLLECTOR CURRENT (mAdc)
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MJD340
2 VCEO(sus) 70 ICEO IEBO hFE fT Symbol VCE(sat) VBE(on) 100 Min 300 10 30 - - - - 200 Max 240 1.5 0.1 0.1 - 1 - VCE = 2 V VCE = 10 V 300 V V V - MHz Unit mA mA 500
MJD340 (NPN) MJD350 (PNP)
MJD340
1 TJ = 25C 0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 VBE @ VCE = 10 V
0.6
0.4 VCE(sat) @ IC/IB = 10 0.2 IC/IB = 5 0 10 20 30 50 100 200 300 IC, COLLECTOR CURRENT (mA) 500
Figure 2. "On" Voltages
MJD350
200 1 TJ = 150C 25C V, VOLTAGE (VOLTS) 1 TJ = 25C 0.8 VBE(sat) @ IC/IB = 10 0.6
MJD350
hFE , DC CURRENT GAIN
100 70 50 30 20
- 55C
VBE @ VCE = 10 V
0.4
IC/IB = 10
VCE = 2 V VCC = 10 V 5 7 10 20 30 200 300 50 70 100 IC, COLLECTOR CURRENT (mA) 500
0.2 VCE(sat) 0 5 7 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC/IB = 5 200 300 500
10
Figure 3. DC Current Gain
Figure 4. "On" Voltages
1 0.7 0.5 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.01
D = 0.5 0.2 0.1 0.05 0.01 RqJC(t) = r(t) RqJC RqJC = 8.33C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) P(pk)
t1 t2 DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.02 0.03 0.05
0.1
0.2 0.3
0.5
1
23 5 t, TIME (ms)
10
20
30
50
100
200 300
500
1k
Figure 5. Thermal Response
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3
MJD340 (NPN) MJD350 (PNP)
1000 500 300 200 100 ms 500 ms 1 ms
100 50 30 20 10 5 3 2 1 10 20 30 50 70 100 200 300 500 700 1000 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) dc
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 6 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. TJ(pk) may be calculated from the data in Figure 5. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
IC, COLLECTOR CURRENT (mA)
Figure 6. Active Region Safe Operating Area
TA TC 2.5 25 PD, POWER DISSIPATION (WATTS)
2 20
1.5 15 TA 1 10 TC
0.5
5
0
0
25
50
75
100
125
150
T, TEMPERATURE (C)
Figure 7. Power Derating
ORDERING INFORMATION
Device MJD340 MJD340G MJD340RL MJD340RLG MJD340T4 MJD340T4G MJD350 MJD350G MJD350T4 MJD350T4G Package DPAK DPAK (Pb-Free) DPAK DPAK (Pb-Free) DPAK DPAK (Pb-Free) DPAK DPAK (Pb-Free) DPAK DPAK (Pb-Free) 2500 / Tape & Reel 75 Units / Rail 2500 / Tape & Reel 1800 / Tape & Reel 75 Units / Rail Shipping
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
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MJD340 (NPN) MJD350 (PNP)
PACKAGE DIMENSIONS
DPAK CASE 369C-01 ISSUE D
C A B c2
NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 --- 0.040 0.155 --- MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 --- 1.01 3.93 ---
E b3 L3
1 4
A
D
2 3
Z
DETAIL A
H
L4
b2 e
b 0.005 (0.13)
M
c C L2
GAUGE PLANE
H C L L1 DETAIL A
SEATING PLANE
A1
ROTATED 90 CW 5
SOLDERING FOOTPRINT*
6.20 0.244 3.0 0.118
STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR
2.58 0.101
5.80 0.228
1.6 0.063
6.172 0.243
SCALE 3:1
mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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5
MJD340/D

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